Design and Development of Thin Film Bulk Acoustic Wave Resonator Filter For RF Applications | Shiv Nadar University
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Design and Development of Thin Film Bulk Acoustic Wave Resonator Filter For RF Applications

The field of mobile communication has witnessed a huge revolution in the last one and a half decade. The explosive growth in the number of smartphones, increase in data consumption, overcrowding of the frequency spectrum and evolution of new technologies have brought along many challenges for the design of RF filters. Some of these challenges are to design filters with improved out-of-band (OoB) rejection, low insertion losses and small size. Further, for wearable smartphones, these filters should be made flexible. Thin film bulk acoustic wave resonator (TFBAR) and polymer based TFBAR technology provide solutions to these challenges.

The thesis explores the design and simulation of TFBAR for the 2.6 GHz frequency band. The 2.6 GHz band is an important frequency band for handheld communication devices. Governments across the nations, especially in developing countries, are allocating the 190 MHz frequency available in the 2.6 GHz band for mobile broad band services worldwide.

TFBARs with zinc oxide (ZnO) piezoelectric layer for 2.6 GHz band have been designed and simulated using Finite Element Method (FEM) based MEMS design software tool CoventorWareTM. A number of studies have been done to study the effect of resonator area, different electrode materials, effect of piezoelectric thickness and electrode thickness on TFBAR performance. The modified Butterworth Van Dyke model (mBVD) equivalent model of the TFBAR is extracted from the designed TFBARs. This model is used to design and simulate a 3rd order ladder filter for the 2.6 GHz band. Various studies related to the effect of ratio of areas of series and parallel TFBAR in the 3rd order filter configuration, filter order and effect of external reactive components on TFBAR response have been studied.

This work also presents the design and simulation of polyimide TFBAR (PI-TFBAR) and realization of PI-TFBAR filter. The TFBAR in this case has a polyimide layer beneath the bottom electrode to confine the acoustic wave by isolating the substrate from the device. This gives the structure mechanical strength and also makes it independent of the underlying substrate. An attempt has been made to reduce the spurious modes using thickened edge load solution. Filters designed from TFBAR and PI-TFBAR have been compared with other reported works. Finally, the conclusion of the work is presented with limitations and future scope.

Electrical Engineering
Student Name: 
Jyotirmoy Dutta
Faculty Advisor: 
Co-Faculty Advisor: