Defect-Induced Bipolar Resistive Switching in TiO2-based Memory Devices | Shiv Nadar University
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Defect-Induced Bipolar Resistive Switching in TiO2-based Memory Devices

Metal oxide (MO) based two-terminal resistive random access memory (RRAM) has attracted much attention as a next generation non-volatile memory devices with higher speed, endurance, retention, and scalability along with simple miniaturized architecture. Understanding the switching mechanism of metal/MO/metal RRAM is of paramount importance to further enhance the performance. The study till date suggests that the oxygen vacancy (OV) induced formation and dissolution of conducting filaments in TiO2 layers play the key role in these devices. To understand the function of OV on resistive switching mechanism, both 50 keV Ar+ and O+ ions have been employed independently with varying ion fluences from (0.05-5) × 1016 ions/cm2. Ar+ ion irradiation induced formation of TiO2-x nanochannels and the evolution of forming potential free resistive switching behavior at room temperature at a fluence of 5 ×1016 ions/cm2 are discussed. However, unlike Ar+ ion irradiation, O+ ions turn the as-grown TiO2 to more resistive via oxygen enrichment, though a significant resistive switching loop is recorded at a fluence of 5 ×1016 ions/cm2. A self-recovery of resistive switching loop at nanoscale has also been discussed with the help of cAFM. Moreover, n-type doping of foreign elements considered to be beneficial for forming potential free switching. Finally, the role of chemically doped Ta in governing the resistive switching in TiO2 with enhanced resistance ratio (Ron/Roff) of ~ 104, endurance (>105 cycles), and retention (>104 s) are discussed.

Student Name: 
Arabinda Barman
Faculty Advisor: